题目：Unification of MOS/ GaN MIS-HEMT Compact Models with the Unified Regional Modeling Approach

  时间：10月26日下午3:30 pm-4:30 pm

地点：亦玄馆302

Abstract

This talk presents the motivation and philosophy behind the development of a compact model (Xsim) for unification of MOSFET models with the unified regional modeling (URM) approach.  It is based on unified regional surface-potential solutions for bulk-MOS, which can be extended to generic double-gate (including SOI and nanowire) MOSFETs with common/independent-gate biasing and with/without body contact.  The DC/AC model is physically scalable in geometry/bias as well as in body thickness and doping, encompassing partial/full-depletion and volume/strong inversion.  New paradigm shift in “ground-referencing” and “source/drain by label” provides complete Gummel symmetry while allowing physical modeling of asymmetric devices, which also provides easy extension to include contact effects for modeling pn-junction as well as Schottky-barrier (SB) and dopant-segregated Schottky (DSS) source/drain.  The core model is directed towards modeling emerging devices and technologies in one unified framework without duplicating efforts, which also provides seamless transitions among various device structures and operations, with selectable accuracy for simulation and verification of future-generation ULSI circuits.

Speaker Biography

Dr. Xing Zhou received the B.E. degree from Tsinghua University, China, in 1983, and the M.S. and Ph.D. degrees in electrical engineering from the University of Rochester, NY, in 1987 and 1990, respectively.
He joined Nanyang Technological University (NTU) in 1992 in the School of EEE, where he is currently a tenured associate professor.  He has been teaching TCAD design and doing device modeling research in close collaboration with wafer fabs over the past decades.  His current research focuses on development of compact models for circuit simulation for conventional (bulk/SOI) and emerging (double-gate/nanowire) nanoscale MOS devices.  He was visiting professor to Stanford University (1997/2001), Hiroshima University (2003), and Universiti Teknologi Malaysia (2007).  He is the founding chair of the Workshop on Compact Modeling (WCM) in association with the Nano Science and Technology Institute (NSTI) Nanotech Conference since 2002.
Dr. Zhou is an elected member of the IEEE Electron Devices Society (EDS) Administrative Committee, chair of the EDS Asia Pacific Subcommittee for Regions/Chapters, and a senior member of the IEEE.  He has served as an EDS distinguished lecturer since 2000.  Since 2007, Dr. Zhou has been an editor of the IEEE Electron Device Letters.

（萨本栋微米纳米科学技术研究院办公室 林常胜）